From 77d70d856aa5f5afb114379e2a23c7b6224b7535 Mon Sep 17 00:00:00 2001
From: yincheng.zhong <634916154@qq.com>
Date: 星期四, 03 十一月 2022 10:13:05 +0800
Subject: [PATCH] V1.38 1.修改电量检测逻辑 2.修改UWB冲突避免逻辑 3.优化代码节省电量 功耗测试： 0hz   0.07ma 1hz    0.8ma 2hz   1.5ma 5hz    3.5ma 10hz  7.1ma

---
 Src/OnChipDevices/Flash.h |    4 ++--
 1 files changed, 2 insertions(+), 2 deletions(-)

diff --git a/Src/OnChipDevices/Flash.h b/Src/OnChipDevices/Flash.h
index 1ebecef..76d496a 100644
--- a/Src/OnChipDevices/Flash.h
+++ b/Src/OnChipDevices/Flash.h
@@ -6,7 +6,7 @@
   
 #define FLASH_BASE_ADDR   		(uint32_t)0x08000000	//the start address of APP,keep the 0x8000000-0x8004FFF forIAP(20K)
 
-#define FLASH_IAP_CTRL_MAP		(uint32_t)0x0800F000    //the control map start address, 63K
+#define FLASH_IAP_CTRL_MAP		(uint32_t)0x0800FC00    //the control map start address, 63K
 #define MAX_APP_ADDR      		(uint32_t)0x0800FFFF    //the max array of Flash address 
 
 
@@ -18,5 +18,5 @@
 void FLASH_Read( uint32_t Address, uint8_t *Readbuff, uint32_t Len);
 uint32_t FLASH_Write( uint32_t Address, const uint8_t* pData, uint32_t Len);
 void FLASH_Dis_WriteProt_Pages(void);
-
+unsigned short int STMFLASH_ReadHalfWord(unsigned int faddr);
 

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