From 858c42df60ffeb07dc5916e2cec1f0b98b1b4e39 Mon Sep 17 00:00:00 2001
From: yincheng.zhong <634916154@qq.com>
Date: 星期五, 12 五月 2023 12:04:39 +0800
Subject: [PATCH] V2.4 1.修改震动逻辑，先短振3下，5秒后再振3下，每5分钟循环一次，如果短按按键，2小时内不再震动。 2.SOS改成长按3秒按键触发。

---
 Src/OnChipDevices/Flash.h |    4 ++--
 1 files changed, 2 insertions(+), 2 deletions(-)

diff --git a/Src/OnChipDevices/Flash.h b/Src/OnChipDevices/Flash.h
index 193fee0..e9c5a1d 100644
--- a/Src/OnChipDevices/Flash.h
+++ b/Src/OnChipDevices/Flash.h
@@ -8,7 +8,7 @@
 
 #define FLASH_IAP_CTRL_MAP		(uint32_t)0x0800FC00    //the control map start address, 63K
 #define MAX_APP_ADDR      		(uint32_t)0x0800FFFF    //the max array of Flash address 
-
+#define FLASH_HARDWARE_VERSION_MAP		(uint32_t)0x08004F00    //硬件版本号和批次信息位置
 
 #define NVIC_VectTab_FLASH           ((uint32_t)0x08000000)
 
@@ -18,5 +18,5 @@
 void FLASH_Read( uint32_t Address, uint8_t *Readbuff, uint32_t Len);
 uint32_t FLASH_Write( uint32_t Address, const uint8_t* pData, uint32_t Len);
 void FLASH_Dis_WriteProt_Pages(void);
-
+	unsigned short int STMFLASH_ReadHalfWord(unsigned int faddr);
 

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